Intel and Micron develop first-ever 128 Gb NAND Flash memory chip

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Flash buddies Intel and Micron have today announced a significant breakthrough in terms of NAND density, the first 128 Gb (16 GB) MLC NAND memory chip. Manufactured on 20 nm process technology, this 128 Gb chip complies with the ONFI 3.0 specification (enabling speeds of up to 333 megatransfers per second) and can be used for new, high-capacity solid state drives, as well as for next-generation tablets, smartphones and other portable devices.

According to Intel and Micron, this milestone was made possible by the use of a new, innovative cell structure that 'breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.'

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"It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20 nm NAND devices," said Rob Crooke, Intel vice president and general manager of Intel's Non-Volatile Memory Solutions Group. "Through the utilization of planar cell structure and Hi-K/Metal gate stack, IMFT continues to advance the technological capabilities of our NAND flash memory solutions to enable exciting new products, services and form factors."

IM Flash Technologies (the NAND joint venture of Intel and Micron) will have samples of the 128 Gb MLC chip in January and expects to start mass production in the first half of next year. In the mean time, the JV has ramped up mass production of its 64 Gb 20 nm NAND memory.

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Intel and Micron have created the first 128GB multi-level cell (MLC) NAND flash device developed using 20 nanometre (nm) processing technology.

Under the name IM Flash Technologies, the two companies have also started mass production of 64GB NAND devices, created using the same process.

Offering twice the performance and capacity of the 64GB NAND, the 128GB device can store 1 terabit of data in a single tiny package with just eight die and can achieve speeds of 333 megatransfers (MT/s) per second

In a press release, Intel and Micron explained how they managed to create the flash devices using the 20nm process:

“The key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures. Their 20nm NAND uses a planar cell structure — the first in the industry — to overcome the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.”

The demand for high-capacity NAND flash devices is expected to grow over the coming years as demand for digital content and more effective storage in mobile devices increases. The two companies expect the two tiny products to be used in smartphones, tablets, solid state drives (SSDs), and other high-performance devices.

Intel and Micron plan to ramp up production of the 64GB flash product over the Christmas period and then make samples of the 128GB device available in January, followed by mass production in the first half of the year.